SPB21N10

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25° C: 21A
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Power - Max: 90W
Series: SIPMOS®
Manufacturer: Infineon Technologies
Supplier Device Package: P-TO263-3
Rds On (Max) @ Id, Vgs: 80 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds: 865pF @ 25V
Gate Charge (Qg) @ Vgs: 38.4nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 44µA


Features:

· N-Channel
· Enhancement mode
·175°C operating temperature
· Avalanche rated
· dv/dt rated


Specifications

Parameter	Symbol	Value	Unit
Continuous drain current TC = 25 °C TC = 100 °C	ID	21 15.0	A
Pulsed drain current TC = 25 °C	ID puls	84
Avalanche energy, single pulse ID =21 A, VDD = 25 V, RGS = 25	EAS	130	mJ
Reverse diode dv/dt IS =21 A, VDS = 80 V, di/dt = 200 A/s, Tjmax = 175 °C	dv/dt	6	kV/s
Gate source voltage	VGS	±20	V
Power dissipation TC = 25 °C	Ptot	90	W
Operating and storage temperature	Tj , Tstg	-55... +175	°C
IEC climatic category; DIN IEC 68-1		55/175/56

Parameters:

Technical/Catalog Information	SPB21N10
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	21A
Rds On (Max) @ Id, Vgs	80 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds	865pF @ 25V
Power - Max	90W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	38.4nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	SPB21N10 SPB21N10 SPB21N10INTR ND SPB21N10INTRND SPB21N10INTR