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SPB20N60C3

MOSFET COOL MOS PWR TRANS MAX 650V

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SeekIC No. : 00157203 Detail

SPB20N60C3: MOSFET COOL MOS PWR TRANS MAX 650V

SPB20N60C3 Data Sheet

floor Price/Ceiling Price

US $ 1.21~1.58 / Piece | Get Latest Price
Part Number:
SPB20N60C3
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~605
  • 605~1000
  • 1000~2000
  • 2000~5000
  • Unit Price
  • $1.58
  • $1.33
  • $1.27
  • $1.21
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 650 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 20.7 A
Resistance Drain-Source RDS (on) : 0.19 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-263 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 650 V
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-263
Resistance Drain-Source RDS (on) : 0.19 Ohms
Continuous Drain Current : 20.7 A


Features:

• New revolutionary high voltage technology
• Worldwide best RDS(on) in TO 220
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)


Specifications

Parameter Symbol Value Unit
SPP_B_I SPA
Continuous drain current
TC = 25 °C
TC = 100 °C		 ID 20.7
13.1		 20.71)
13.11)		 A
Pulsed drain current, tp limited by Tjmax ID puls 62.1 62.1 A
Avalanche energy, single pulse
ID=10A, VDD=50V		 EAS 690 690 mJ
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=20A, VDD=50V		 EAR 1 1
Avalanche current, repetitive tAR limited by Tjmax IAR 20 20 A
Gate source voltage static VGS ±20 ±20 V
Gate source voltage AC (f >1Hz) VGS ±30 ±30  
Power dissipation, TC = 25°C Ptot 208 34.5 W
Operating and storage temperature Tj , Tstg -55...+150 °C
Drain Source voltage slope
VDS = 480 V, ID = 20.7 A, Tj = 125 °C		 dv/dt 50 V/ns



Parameters:

Technical/Catalog InformationSPB20N60C3
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25° C20.7A
Rds On (Max) @ Id, Vgs190 mOhm @ 13.1A, 10V
Input Capacitance (Ciss) @ Vds 2400pF @ 25V
Power - Max208W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs114nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names SPB20N60C3
SPB20N60C3
SPB20N60C3INTR ND
SPB20N60C3INTRND
SPB20N60C3INTR



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