SKM200GB124DE

The SKM200GB124DE is designed as one kind of low loss IGBT module, SKM200GB124DE has some points of features such as (1)MOS input (voltage controlled);(2)N-channel, homogeneous Si structure (NPT-non punch-through IGBT);(3)high short circuit capability, self limiting to 6 x Icnom;(4)without hard mould;(5)fast and soft inverse CAL diodes;(6)isolated copper baseplate using DBC direct copper bonding technology;(7)large clearance (12 mm) and creepage distances (20 mm).

Also SKM200GB124DE can be used in wide range of applications such as (1)switch mode power supplies;(2)inverters;(3)DC choppers;(4)AC motor speed control;(5)switching (not for lineat use);(6)UPS;(7)general power switching applications. The absolute maximum ratings of the SKM200GB124DE can be summarized as:(1)V CES: 1200 V;(2)Ic: 290 (200) A;(3)I CRM: 300 A;(4)V GES: +/- 20 V;(5)Tvj: -40 to +150 ;(6)Visol: 2500 V;(7)I F: 195 (130) A;(8)I FRM: 300 A;(9)I FSM: 1450.

The electrical characteristics of SKM200GB124DE can be summarized as:(1)VGE(th): 4.5 to 6.5 V;(2)I CES: 0.1 to 0.3 mA;(3)VCE(TO): 1.1 to 1.25 V;(4)rCE: 6.7 to 8.0 m;(5)VCE(sat): 2.1 to 2.45 V;(6)Cies: 11 to 15 nF;(7)Coes: 1.6 to 2.0 nF;(8)Cres: 0.8 to 1.0 nF;(9)LCE: 20 nH;(10)Rcc+ee: 0.35 m;(11)td(on): 75 ns;(12)tr: 50 ns. If you want to know more information such as the electrical characteristics about the SKM200GB124DE, please download the datasheet in www.seekic.com or www.chinaicmart.com.