DescriptionThe SKM200GAL126D is designed as one kind of Trench IGBT module, SKM200GAL126Dhas some points of features such as (1)homogeneous Si;(2)SPT = soft-punch-through technology;(3)VCEsat with positive temperature coefficient;(4)high short circuit capability, self limiting to 6 x Ic. Also SKM...
SKM200GAL126D: DescriptionThe SKM200GAL126D is designed as one kind of Trench IGBT module, SKM200GAL126Dhas some points of features such as (1)homogeneous Si;(2)SPT = soft-punch-through technology;(3)VCEsat with p...
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DescriptionThe SKM200GAL123DKLD110 is one member of the SKM200GAL123D family, SKM200GAL123DKLD110i...
Features: • MOS input (voltage controlled)• N channel, homogeneous Silicon structure N...
SpecificationsDescriptionThe SKM200GB124DE is designed as one kind of low loss IGBT module, SKM200...
The SKM200GAL126D is designed as one kind of Trench IGBT module, SKM200GAL126D has some points of features such as (1)homogeneous Si;(2)SPT = soft-punch-through technology;(3)VCEsat with positive temperature coefficient;(4)high short circuit capability, self limiting to 6 x Ic.
Also SKM200GAL126D can be used in wide range of applications such as (1)AC inverter drives;(2)UPS;(3)electronic welders fSW up to 20 kHz. The absolute maximum ratings of the SKM200GAL126D can be summarized as:(1)V CES: 1200 V;(2)Ic: 260 (190) A;(3)I CRM: 300 A;(4)V GES: +/- 20 V;(5)Tvj: -40 to +150 ;(6)Visol: 4000 V;(7)I F: 200 (140) A;(8)I FRM: 300 A;(9)I FSM: 1100.
The electrical characteristics of SKM200GAL126D can be summarized as:(1)VGE(th): 5 to 6.5 V;(2)I CES: 0.1 to 0.3 mA;(3)VCE(TO): 1 to 1.2 V;(4)rCE: 4.7 to 6.3 m;(5)VCE(sat): 1.7 to 2.15 V;(6)Cies: 10.8 nF;(7)Coes: 0,9 nF;(8)Cres: 0.9 nF;(9)LCE: 20 nH;(10)Rcc+ee: 0.35 m. If you want to know more information such as the electrical characteristics about the SKM200GAL126D, please download the datasheet in www.seekic.com or www.chinaicmart.com.