SKM200GAL126D

DescriptionThe SKM200GAL126D is designed as one kind of Trench IGBT module, SKM200GAL126Dhas some points of features such as (1)homogeneous Si;(2)SPT = soft-punch-through technology;(3)VCEsat with positive temperature coefficient;(4)high short circuit capability, self limiting to 6 x Ic. Also SKM...

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SeekIC No. : 004492116 Detail

SKM200GAL126D: DescriptionThe SKM200GAL126D is designed as one kind of Trench IGBT module, SKM200GAL126Dhas some points of features such as (1)homogeneous Si;(2)SPT = soft-punch-through technology;(3)VCEsat with p...

floor Price/Ceiling Price

Part Number:
SKM200GAL126D
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/4

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Product Details

Description



Description

The SKM200GAL126D is designed as one kind of Trench IGBT module, SKM200GAL126D has some points of features such as (1)homogeneous Si;(2)SPT = soft-punch-through technology;(3)VCEsat with positive temperature coefficient;(4)high short circuit capability, self limiting to 6 x Ic.

Also SKM200GAL126D can be used in wide range of applications such as (1)AC inverter drives;(2)UPS;(3)electronic welders fSW up to 20 kHz. The absolute maximum ratings of the SKM200GAL126D can be summarized as:(1)V CES: 1200 V;(2)Ic: 260 (190) A;(3)I CRM: 300 A;(4)V GES: +/- 20 V;(5)Tvj: -40 to +150 ;(6)Visol: 4000 V;(7)I F: 200 (140) A;(8)I FRM: 300 A;(9)I FSM: 1100.

The electrical characteristics of SKM200GAL126D can be summarized as:(1)VGE(th): 5 to 6.5 V;(2)I CES: 0.1 to 0.3 mA;(3)VCE(TO): 1 to 1.2 V;(4)rCE: 4.7 to 6.3 m;(5)VCE(sat): 1.7 to 2.15 V;(6)Cies: 10.8 nF;(7)Coes: 0,9 nF;(8)Cres: 0.9 nF;(9)LCE: 20 nH;(10)Rcc+ee: 0.35 m. If you want to know more information such as the electrical characteristics about the SKM200GAL126D, please download the datasheet in www.seekic.com or www.chinaicmart.com.




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