SKM200GAL123DKLD110

The SKM200GAL123DKLD110 is one member of the SKM200GAL123D family, SKM200GAL123DKLD110 is designed as the Trench IGBT module that has some points of features:(1)MOS input (voltage controlled);(2)N channel, homegeneous Si;(3)low inductance case;(4)very low tail current with low temperature dependence;(5)high short circuit capability, self limiting to 6 x Icnom;(6)latch-up free;(7)fast & soft inverse CAL diodes;(8)isolated copper baseplate using DCB direct copper bonding technology;(9)large clearance (13 mm) and creepage distances (20 mm).

The SKM200GAL123DKLD110 can be used in AC inverter drives and UPS applications. The absolute maximum ratings of this device can be summarized as:(1)VCES: 1200 V;(2)Ic Tcase=25: 200 A;(3)Ic Tcase=85: 180 A;(4)ICRM: 300 A;(5)VGES: +/-20 V;(6)tpsc: 10 us;(7)IF Tcase=25: 200 A;(8)IF Tcase=80: 130 A. If you want to know more information about SKM200GAL123DKLD110, please download the datasheet in www.seekic.com or www.chinaicmart.com .