SpecificationsDescriptionThe SKM180A020 is designed as one kind of power MOSFET module, SKM180A020has some points of features such as (1)avalanche characteristic;(2)N-channel, enhancement mode;(3)short connections and built-in gate resistors to suppress internal oscillations even in critical appli...
SKM180A020: SpecificationsDescriptionThe SKM180A020 is designed as one kind of power MOSFET module, SKM180A020has some points of features such as (1)avalanche characteristic;(2)N-channel, enhancement mode;(3)sh...
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DescriptionThe SKM100GB124D is designed as one kind of Trench IGBT module, SKM100GB124D has some p...
Features: • N channel, homogeneous Si• Low inductance case• Short tail current w...
The SKM180A020 is designed as one kind of power MOSFET module, SKM180A020 has some points of features such as (1)avalanche characteristic;(2)N-channel, enhancement mode;(3)short connections and built-in gate resistors to suppress internal oscillations even in critical applications;(4)isolated copper baseplate;(5)all electrical connections on top for easy busbaring;(6)large clearances (10 mm) and creepage distances (13 mm);(7)UL recognized, file no. E63532.
Also SKM180A020 can be used in wide range of applications such as (1)switch mode power supplies;(2)plasma cutting;(3)DC choppers;(4)AC not suitable for linear amplification;(5)switching (not for lineat use);(6)UPS;(7)general power switching applications. The absolute maximum ratings of the SKM180A020 can be summarized as:(1)VDS: 200 V;(2)ID: 180 (135) A;(3)IDM: 540 A;(4)VGS: +/- 20 V;(5)Tvj: -40 to +150 ;(6)Visol: 2500 V;(7)IF: 180 A;(8)I FM: 540 A.
The electrical characteristics of SKM180A020 can be summarized as:(1)V(BR)DSS: 200 V;(2)VGS(th): 2.1 to 4 V;(3)IDSS: 50 to 250 uA;(4)IGSS: 10 to 100 nA;(5)RDS(on): 9 to 11 m;(6)gfs: 80 to 100 s. If you want to know more information such as the electrical characteristics about the SKM180A020, please download the datasheet in www.seekic.com or www.chinaicmart.com.