SKM150GB173D

The SKM150GB173D is designed as one kind of Trench IGBT module, SKM150GB173D has some points of features such as (1)MOS input (voltage controlled);(2)N-channel, homogeneous Si;(3)low inductance case;(4)very low tail current with low temperature dependance;(5)high short circuit capability, self limiting to 6 x Icnom;(6)latch-up free;(7)fast and soft inverse CAL diodes;(8)isolated copper baseplate using DBC direct copper bonding technology;(9)large clearance (13 mm) and creepage distances (20 mm).

Also SKM150GB173D can be used in wide range of applications such as (1)switching (not for linear use);(2)AC inverter drives on mains 575 to 750 VAC;(3)DC bus voltage 750 to 1200 VDC;(4)public transport (auxiliary syst.). The absolute maximum ratings of the SKM150GB173D can be summarized as:(1)V CES: 1700 V;(2)Ic: 150 (100) A;(3)I CRM: 200 A;(4)V GES: +/- 20 V;(5)Tvj: -40 to +150 ;(6)Visol: 4000 V;(7)I F: 125 (80) A;(8)I FRM: 200 A;(9)I FSM: 1100.

The electrical characteristics of SKM150GB173D can be summarized as:(1)VGE(th): 4.8 to 6.2 V;(2)I CES: 0.1 to 0.3 mA;(3)VCE(TO): 1.65 to 1.9 V;(4)rCE: 17.5 to 20.0 m;(5)VCE(sat): 3.4 to 3.9 V;(6)Cies: 16 nF;(7)Coes: 1.3 nF;(8)Cres: 0.50 nF;(9)LCE: 20 nH;(10)Rcc+ee: 0.35 m;(11)td(on): 470 ns;(12)tr: 90 ns;(3)td(off): 650 ns;(14)tf: 50 ns;(15)Eon: 60 mJ. If you want to know more information such as the electrical characteristics about the SKM150GB173D, please download the datasheet in www.seekic.com or www.chinaicmart.com.