SIR-34ST3F

Radiant Intensity :
Maximum Operating Temperature : + 85 C
Package / Case : T-1
Packaging : Bulk
Minimum Operating Temperature : - 25 C
Wavelength : 950 nm
Beam Angle : 27 deg


Features:

1) Compact (3.1mm).
2) High efficiency, high output PO=8.0mW (I_F=50mA).
3) Wide radiation angle =27°.
4) Emission spectrum well suited to silicon detectors (_P=950nm).
5) Good current-optical output linearity.
6) Long life, high reliability.


Application

Optical control equipment
Light source for remote control devices


Specifications

Parameter	Symbol	Limits	Unit
Forward current	IF	100	mA
Reverse voltage	VR	5	V
Power dissipation	PD	160	mW
Pulse forward current	IFP*	1.0	A
Operating temperature	Topr	−25~+85	°C
Storage temperature	Tstg	−40~+85	°C

* Pulse width=0.1msec, duty ratio 1%


Description

The SIR-34ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 950nm spectrum suitable for silicon detectors. It is small and at the same time has a wide radiation angle, marking it ideal for compact optical control equipment.