SIR-320ST3F

Maximum Operating Temperature : + 85 C
Packaging : Bulk
Wavelength : 940 nm
Minimum Operating Temperature : - 25 C
Radiant Intensity : 5.6 mW/sr
Package / Case : 3.8 mm x 5.2 mm
Beam Angle : +/- 18 deg


Features:

1) Compact (3.1 mm).
2) High efficiency, high output PO = 9.0 mW (I_F = 50 mA).
3) Wide radiation angle q = ±18°
4) Emission spectrum well suited to silicon detectors (_P = 940 nm).
5) Good current-optical output linearity.
6) Long life, high reliability.
7) Low cost, clear epoxy resin package.


Application

Optical control equipment
Light source for remote control devices


Specifications




Description

The SIR-320ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940 nm spectrum suitable for silicon detectors. It is small and at the same time has a wide radiation angle, making it ideal for compact optical control equipment.