SIR-341ST3F

Maximum Operating Temperature : + 85 C
Packaging : Bulk
Wavelength : 940 nm
Minimum Operating Temperature : - 25 C
Beam Angle : +/- 16 deg
Radiant Intensity : 18.1 mW/sr
Package / Case : 3.8 mm x 5.2 mm


Features:

1) Compact (3.1 mm).
2) High efficiency, high output PO = 8.4 mW (I_F = 50 mA).
3) Wide radiation angie 1 / 2 = ±16deg.
4) Peak wavelength well suited to silicon detectors (_P = 940 nm).
5) Good current-optical output linearity.
6) Long life, high reliability.
7) Low cost, clear epoxy resin package.


Application

Optical control equipment
Light source for remote control devices


Specifications

Parameter	Symbol	Limits	Unit
Forward current	IF	75	mA
Reverse voltage	VR	5	V
Power dissipation	PD	100	mW
Pulse forward current	IFP*	1.0	A
Operating temperature	Topr	−25~+85	°C
Storage temperature	Tstg	−40~+85	°C

Description

The SIR-341ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940 mm peak wavelength suitable for silicon detectors. It is small and at the same time has a wide radiation angle, making it ideal for compact optical control equipment.