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SI9407AEY-T1-GE3

MOSFET 60V 3.5A 3.0W 120mohm @ 10V

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SeekIC No. : 00159928 Detail

SI9407AEY-T1-GE3: MOSFET 60V 3.5A 3.0W 120mohm @ 10V

SI9407AEY-T1-GE3 Data Sheet

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Part Number:
SI9407AEY-T1-GE3
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/26

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 3.5 A
Resistance Drain-Source RDS (on) : 0.12 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : SO-8 Packaging : Reel    

Description

Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Package / Case : SO-8
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 3.5 A
Resistance Drain-Source RDS (on) : 0.12 Ohms


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