SI4925BDY-T1-GE3, US $ .27-.33 , Vishay/Siliconix, SI4925BDY-T1-GE3 DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00156660 Detail

SI4925BDY-T1-GE3: MOSFET 30V 7.1A 2.0W 25mohm @ 10V

SI4925BDY-T1-GE3 Data Sheet

US $ .27~.33 / Piece | Get Latest Price

Part Number:: SI4925BDY-T1-GE3
Mfg:: Vishay/Siliconix
Supply Ability:: 5000

Price Break

Qty
0~1690
1690~2500

Unit Price
$.33
$.27

Processing time
15 Days
15 Days

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Upload time: 2024/11/22

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Recent History
What is this?

Si4900DY evaluate
Features: • N-Channel Vertical DMOS• Macro Model (Subcircuit Model)• Level 3 MOS...
SI4900DY-T1-E3 evaluate
US $.45 - .82 / Piece

MOSFET 60V 5.3A 3.1W
SI4900DY-T1-GE3 evaluate
US $.27 - .44 / Piece

MOSFET 60V 5.3A 3.1W 58mohm @ 10V

Product Details

Quick Details

Transistor Polarity :	P-Channel	Drain-Source Breakdown Voltage :	30 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	5.3 A
Resistance Drain-Source RDS (on) :	25 mOhms	Configuration :	Dual
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	SOIC-8 Narrow	Packaging :	Reel

Description

Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Configuration : Dual
Continuous Drain Current : 5.3 A
Resistance Drain-Source RDS (on) : 25 mOhms
Package / Case : SOIC-8 Narrow

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SI4925BDY-T1-GE3

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