SI4812BDY-T1-E3, US $ .49-.7 , Vishay/Siliconix, SI4812BDY-T1-E3 DataSheet download, circuit diagram from SeekIC.com

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SI4812BDY-T1-E3: MOSFET 30V 9A 2.5W

SI4812BDY-T1-E3 Data Sheet

US $ .49~.7 / Piece | Get Latest Price

Part Number:: SI4812BDY-T1-E3
Mfg:: Vishay/Siliconix
Supply Ability:: 5000

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$.49

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Upload time: 2024/11/13

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Recent History
What is this?

Si4800 evaluate
Features: · Low on-state resistance· Fast switching· TrenchMOS™ technology.Application· DC t...
SI4800,518 evaluate
MOSFET N-CH 30V 9A SOT96-1
SI4800BDY-T1-E3 evaluate
US $.31 - .46 / Piece

MOSFET 30V 9A 2.5W

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	30 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	7.3 A
Resistance Drain-Source RDS (on) :	16 mOhms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	SOIC-8 Narrow	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Continuous Drain Current : 7.3 A
Maximum Operating Temperature : + 150 C
Resistance Drain-Source RDS (on) : 16 mOhms
Package / Case : SOIC-8 Narrow

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SI4812BDY-T1-E3

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