SI3909DV-T1-GE3

MOSFET 20V 1.8A 1.15W 200mohm @ 4.5V

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SI3909DV-T1-GE3 Picture
SeekIC No. : 00159772 Detail

SI3909DV-T1-GE3: MOSFET 20V 1.8A 1.15W 200mohm @ 4.5V

floor Price/Ceiling Price

Part Number:
SI3909DV-T1-GE3
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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evaluate  (4.8 stars)

Upload time: 2025/12/15

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 12 V Continuous Drain Current : 1.8 A
Resistance Drain-Source RDS (on) : 0.2 Ohms Configuration : Dual
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TSOP-6 Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Configuration : Dual
Gate-Source Breakdown Voltage : +/- 12 V
Package / Case : TSOP-6
Resistance Drain-Source RDS (on) : 0.2 Ohms
Continuous Drain Current : 1.8 A


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