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PinoutSpecifications Parameter Symbol Limit Unit Drain-Source Voltage VDS -8 V Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150)a,b TA = 25 ID ±2.5 A TA = 70 ±2.0 Continuous Diode Current (Diode Conduction)a, b IS 1.05 Pulsed Drain Current IDM ±...

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Si3905DV: PinoutSpecifications Parameter Symbol Limit Unit Drain-Source Voltage VDS -8 V Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150)a,b TA = 25 ID ±2.5 A TA = 7...

Si3905DV Data Sheet

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Part Number:: Si3905DV
Supply Ability:: 5000

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Upload time: 2024/12/27

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Si3900DV evaluate
PinoutSpecifications Parameter Symbol 5 secs Steady State Unit Drain-Source Voltage V...
SI3900DV-T1 evaluate
MOSFET 20V 2.4A
SI3900DV-T1-E3 evaluate
US $.25 - .47 / Piece

MOSFET 20V 2.4A

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Description

Pinout

Connection Diagram

Specifications

Parameter		Symbol	Limit	Unit
Drain-Source Voltage		V_DS	-8	V
Gate-Source Voltage		V_GS	±8
Continuous Drain Current (T_J = 150)^a,b	T_A= 25	I_D	±2.5	A
	T_A= 70		±2.0
Continuous Diode Current (Diode Conduction)^{a, b}		I_S	1.05
Pulsed Drain Current		I_DM	±7
Maximum Power Dissipation^a,b	T_A = 25	P_D	1.15	W
	T_A = 70		0.73
Operating Junction and Storage Temperature Range		T_J, T_stg	55 to 150

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Si3905DV

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