SI3900DV-T1-GE3, US $ .22-.28 , Vishay/Siliconix, SI3900DV-T1-GE3 DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00156577 Detail

SI3900DV-T1-GE3: MOSFET 20V 2.4A 1.15W 125mohm @ 4.5V

SI3900DV-T1-GE3 Data Sheet

US $ .22~.28 / Piece | Get Latest Price

Part Number:: SI3900DV-T1-GE3
Mfg:: Vishay/Siliconix
Supply Ability:: 5000

Price Break

Qty
0~1850
1850~3000
3000~6000
6000~12000

Unit Price
$.28
$.23
$.22
$.22

Processing time
15 Days
15 Days
15 Days
15 Days

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Upload time: 2024/11/14

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Recent History
What is this?

Si3900DV evaluate
PinoutSpecifications Parameter Symbol 5 secs Steady State Unit Drain-Source Voltage V...
SI3900DV-T1 evaluate
MOSFET 20V 2.4A
SI3900DV-T1-E3 evaluate
US $.25 - .47 / Piece

MOSFET 20V 2.4A

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	20 V
Gate-Source Breakdown Voltage :	+/- 12 V	Continuous Drain Current :	2 A
Resistance Drain-Source RDS (on) :	0.125 Ohms	Configuration :	Dual
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	TSOP-6	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Configuration : Dual
Gate-Source Breakdown Voltage : +/- 12 V
Package / Case : TSOP-6
Continuous Drain Current : 2 A
Resistance Drain-Source RDS (on) : 0.125 Ohms

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SI3900DV-T1-GE3

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