SGS13N60UFDTU

IGBT Transistors 600V/6.5A/w/FRD

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SGS13N60UFDTU: IGBT Transistors 600V/6.5A/w/FRD

floor Price/Ceiling Price

US $ .68~1.22 / Piece | Get Latest Price
Part Number:
SGS13N60UFDTU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $1.22
  • $1.15
  • $.82
  • $.68
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/10/5

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Collector-Emitter Saturation Voltage : 2.1 V Maximum Gate Emitter Voltage : +/- 20 V
Continuous Collector Current at 25 C : 13 A Gate-Emitter Leakage Current : +/- 100 nA
Power Dissipation : 45 W Maximum Operating Temperature : + 150 C
Package / Case : TO-220F-3 Packaging : Tube    

Description

Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Collector-Emitter Saturation Voltage : 2.1 V
Maximum Gate Emitter Voltage : +/- 20 V
Continuous Collector Current at 25 C : 13 A
Gate-Emitter Leakage Current : +/- 100 nA
Package / Case : TO-220F-3
Power Dissipation : 45 W


Parameters:

Technical/Catalog InformationSGS13N60UFDTU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)13A
Vce(on) (Max) @ Vge, Ic2.6V @ 15V, 6.5A
Power - Max45W
Mounting TypeThrough Hole
Package / CaseTO-220F
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names SGS13N60UFDTU
SGS13N60UFDTU



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