SGD04N60, US $ .35-.45 , Infineon Technologies, SGD04N60 DataSheet download, circuit diagram from SeekIC.com

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SGD04N60: IGBT Transistors FAST IGBT NPT TECH 600V 4A

SGD04N60 Data Sheet

US $ .35~.45 / Piece | Get Latest Price

Part Number:: SGD04N60
Mfg:: Infineon Technologies
Supply Ability:: 5000

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Upload time: 2024/12/26

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What is this?

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Product Details

Quick Details

Configuration :	Single	Collector- Emitter Voltage VCEO Max :	600 V
Maximum Gate Emitter Voltage :	+/- 20 V	Maximum Operating Temperature :	+ 150 C
Package / Case :	TO-252-3	Packaging :	Reel

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Configuration : Single
Packaging : Reel
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : TO-252-3

Specifications

Parameter	Symbol	Value	Unit
Collector-emitter voltage	V_CE	600	V
DC collector current TC = 25°C TC = 100°C	I_C	9.4 4.9	A
Pulsed collector current, tp limited by Tjmax	I _{Cpul s}	19
Turn off safe operating area VCE 600V, Tj 150°C	-	19
Gate-emitter voltage	V_GE	±20	V
Avalanche energy, single pulse IC = 4 A, VCC = 50 V, RGE = 25 Ω, start at Tj = 25°C	E_AS	25	mJ
Short circuit withstand time1) VGE = 15V, VCC 600V, Tj 150°C	t_SC	10	µs
Power dissipation TC = 25°C	P_{t o t}	50	W
Operating junction and storage temperature	Tj , T_stg	-55...+150	°C

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SGD04N60

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