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SGD02N120

IGBT Transistors FAST IGBT NPT TECH 1200V 2A

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SeekIC No. : 00143264 Detail

SGD02N120: IGBT Transistors FAST IGBT NPT TECH 1200V 2A

SGD02N120 Data Sheet

floor Price/Ceiling Price

US $ .35~.45 / Piece | Get Latest Price
Part Number:
SGD02N120
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1520
  • 1520~2500
  • 2500~5000
  • 5000~10000
  • Unit Price
  • $.45
  • $.38
  • $.36
  • $.35
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

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Upload time: 2024/10/30

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 1200 V
Maximum Gate Emitter Voltage : +/- 20 V Maximum Operating Temperature : + 150 C
Package / Case : TO-252-3 Packaging : Reel    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Operating Temperature : + 150 C
Configuration : Single
Packaging : Reel
Maximum Gate Emitter Voltage : +/- 20 V
Collector- Emitter Voltage VCEO Max : 1200 V
Package / Case : TO-252-3


Specifications

Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCE
1200
V
DC collector current
TC = 25°C
TC = 100°C
IC
6.2
2.8
A
Pulsed collector current, tp limited by Tjmax
I Cpul s
9.6
Turn off safe operating area
VCE 600V, Tj 150°C
-
9.6
Gate-emitter voltage
VGE
±20
V
Avalanche energy, single pulse
IC = 4 A, VCC = 50 V, RGE = 25 Ω,
start at Tj = 25°C
EAS
10
mJ
Short circuit withstand time1)
VGE = 15V, VCC 600V, Tj 150°C
tSC
10
µs
Power dissipation
TC = 25°C
P t o t
62
W
Operating junction and storage temperature
Tj , Tstg
-55...+150
°C



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