SGD02N60

IGBT Transistors FAST IGBT NPT TECH 600V 2A

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SeekIC No. : 00143293 Detail

SGD02N60: IGBT Transistors FAST IGBT NPT TECH 600V 2A

floor Price/Ceiling Price

US $ .26~.33 / Piece | Get Latest Price
Part Number:
SGD02N60
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1520
  • 1520~2500
  • 2500~5000
  • 5000~10000
  • Unit Price
  • $.33
  • $.28
  • $.27
  • $.26
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Maximum Gate Emitter Voltage : +/- 20 V Maximum Operating Temperature : + 150 C
Package / Case : TO-252-3 Packaging : Reel    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Configuration : Single
Packaging : Reel
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : TO-252-3


Features:

• 75% lower Eoff compared to previous generation combined with low conduction losses
• Short circuit withstand time 10 s
• Designed for:
- Motor controls
- Inverter
• NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability



Specifications

Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCE
600
V
DC collector current
TC = 25°C
TC = 100°C
IC
6.0
2.9
Pulsed collector current, tp limited by Tjmax
ICpu ls
12
Turn off safe operating area
VCE 600V, Tj 150°C
-
12
Gate-emitter voltage
VGE
±20
V
Avalanche energy, single pulse
IC = 2 A, VCC = 50 V, R GE = 25 ,
start at Tj = 25°C
EAS
13
mJ
Short circuit withstand time1
VGE = 15V, 100V VCC 1200V, Tj 150°C
tSC
10
s
Power dissipation
TC = 25°C
Pt o t
30
W
Operating junction and storage temperature
Tj , Ts tg
-55...+150
°C


1) Allowed number of short circuits: <1000; time between short circuits: >1s.




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