IGBT Transistors FAST IGBT NPT TECH 600V 2A
SGD02N60: IGBT Transistors FAST IGBT NPT TECH 600V 2A
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Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V | ||
Maximum Gate Emitter Voltage : | +/- 20 V | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | TO-252-3 | Packaging : | Reel |
Parameter |
Symbol |
Value |
Unit |
Collector-emitter voltage |
VCE |
600 |
V |
DC collector current TC = 25°C TC = 100°C |
IC |
6.0 2.9 |
|
Pulsed collector current, tp limited by Tjmax |
ICpu ls |
12 | |
Turn off safe operating area VCE 600V, Tj 150°C |
- |
12 | |
Gate-emitter voltage |
VGE |
±20 |
V |
Avalanche energy, single pulse IC = 2 A, VCC = 50 V, R GE = 25 , start at Tj = 25°C |
EAS |
13 |
mJ |
Short circuit withstand time1 VGE = 15V, 100V VCC 1200V, Tj 150°C |
tSC |
10 |
s |
Power dissipation TC = 25°C |
Pt o t |
30 |
W |
Operating junction and storage temperature |
Tj , Ts tg |
-55...+150 |
°C |
1) Allowed number of short circuits: <1000; time between short circuits: >1s.