S29AL016M

-ProgramSuspend & Resume: read other sectors before programming operation is completed
-Erase Suspend & Resume: read/program other sectors before an erase operation is completed
-Data# polling & toggle bits provide status
-Unlock Bypass Program command reduces overall multiple-word programming time
-CFI (Common Flash Interface) compliant: allows host system to identify and accommodate multiple flash devices

Storage Temperature, Plastic Packages. . . . . . . . . . . . . .  .65°C to +150°C
Ambient Temperature with Power Applied. . . . . . . . .. . . . .65°C to +125°C
Voltage with Respect to Ground
           V_CC (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0.5 V to +4.0 V
           A9, OE#, and RESET# (Note 2) . . . . . . . . . . . . . .. .0.5 V to +12.5 V
           All other pins (Note 1). . . . . . . . . . . . . . . . . .   . 0.5 V to V_CC+0.5 V
Output Short Circuit Current (Note 3). . . . . . . . . . . . . .  . . . . . . . . . 200 mA

The S29AL016M is a 16 Mbit, 3.0 Volt-only Flash memory organized as 2,097,152 bytes or 1,048,576 words. The device is offered in a 48-ball Fine-pitch BGA, 64-ball Fortified BGA, and 48-pin TSOP packages. The word-wide data (x16) appears on DQ15DQ0; the byte-wide (x8) data appears on DQ7DQ0. The S29AL016M re-quires only a single 3.0 volt power supply for both read and write functions, designed to be programmed in-system with the standard system 3.0 volt VCC sup-ply. The S29AL016M can also be programmed in standard EPROM programmers.

The S29AL016M offers access times of 90 and 100 ns. To eliminate bus contention the device has separate chip enable (CE#), write enable (WE#) and output enable (OE#) controls.

The S29AL016M is entirely command set compatible with the JEDEC single-power-supply Flash standard. Commands are written to the device using standard microprocessor write timing. Write cycles also internally latch addresses and data needed for the programming and erase operations.

The sector erase architecture of S29AL016M allows memory sectors to be erased and repro-grammed without affecting the data contents of other sectors. The device is fully erased when shipped from the factory.

Device programming and erasure of S29AL016M are initiated through command sequences. Once a program or erase operation has begun, the host system need only poll the DQ7 (Data# Polling) or DQ6 (toggle) status bits or monitor the Ready/Busy# (RY/BY#) output to determine whether the operation is complete. To facilitate programming, an Unlock Bypass mode reduces command sequence overhead by requiring only two write cycles to program data instead of four.

Hardware data protection measures of S29AL016M include a low VCC detector that automati-cally inhibits write operations during power transitions. The hardware sector protection feature disables both program and erase operations in any combina-tion of sectors of memory. This can be achieved in-system or via programming equipment.

The Erase Suspend/Erase Resume feature of S29AL016M allows the host system to pause an erase operation in a given sector to read or program any other sector and then complete the erase operation. The Program Suspend/Program Resume fea-ture enables the host system to pause a program operation in a given sector to read any other sector and then complete the program operation.

The hardware RESET# pin of S29AL016M terminates any operation in progress and resets the device, after which it is then ready for a new operation. The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the de-vice, enabling the host system to read boot-up firmware from the Flash memory device.

The S29AL016M reduces power consumption in the standby mode when it detects specific voltage levels on CE# and RESET#, or when addresses have been stable for a specified period of time.

The SecSi™ (Secured Silicon) Sector of S29AL016M provides a 128-word/256-byte area for code or data that can be permanently protected. Once this sector is protected, no further changes within the sector can occur.

MirrorBit flash technology of S29AL016M combines years of Flash memory manufacturing expe-rience to produce the highest levels of quality, reliability and cost effectiveness. The device electrically erases all bits within a sector simultaneously via hot-hole assisted erase. The data is programmed using hot electron injection.