S29AL004D

Software Features
􀂄Data# Polling and toggle bits
-Provides a software method of detecting program or erase operation completion
􀂄Erase Suspend/Erase Resume
-Suspends an erase operation to read data from, or program data to, a sector that is not being erased, then  resumes the erase operation
Hardware Features
􀂄Ready/Busy# pin (RY/BY#)
-Provides a hardware method of detecting program or erase cycle completion
􀂄Hardware reset pin (RESET#)
-Hardware method to reset the device to reading array data

Storage Temperature Plastic Packages . . . . . . . . . . . .65°C to +150°C
Ambient Temperature with Power Applied. . . . . . . . . . .65°C to +85°C
Voltage with Respect to Ground VCC (Note 1) . . . . . . . . 0.5 V to +4.0 V
A9, OE#, and RESET# (Note 2). . . . . . . . . . . . . . . . . . . 0.5 V to +12.5 V
All other pins (Note 1) . . . . . . . . . . . . . . . . . . . . . . . 0.5 V to VCC+0.5 V
Output Short Circuit Current (Note 3). . . . . . . . . . . . . . . . . . . . . . 200 mA
Notes:
1.Minimum DC voltage on input or I/O pins is 0.5 V. During voltage transitions, input or I/O pins may undershoot VSS to 2.0 V for periods of up to 20 ns. See Figure 7, on page 33. Maximum DC voltage on input or I/O pins is VCC +0.5 V. During voltage transitions, input or I/O pins may overshoot to VCC +2.0 V for periods up to 20 ns. See Figure 8, on page 33.

2.Minimum DC input voltage on pins A9, OE#, and RESET# is 0.5 V. During voltage transitions, A9, OE#, and RESET# may undershoot VSS to 2.0 V for periods of up to 20 ns. See Figure 7, on page 33. Maximum DC input voltage on pin A9 is +12.5 V which may overshoot to 14.0 V for periods up to 20 ns.

3.No more than one output may be shorted to ground at a time. Duration of the short circuit should not be greater than one second.

Stresses above those listed under Absolute Maximum Ratings‚ on page 32 may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational sections of this data sheet is not implied. Exposure of the device to absolute maximum rating conditions for extended periods may affect device reliability.

The S29AL004D is a 4 Mbit, 3.0 volt-only Flash memory organized as 524,288 bytes or 262,144 words. The device is offered in 48-ball FBGA, 44-pin SO, and 48-pin TSOP packages. The word-wide data (x16) appears on DQ15DQ0; the byte-wide (x8) data appears on DQ7DQ0. This device requires only a single, 3.0 volt VCC supply to perform read, program, and erase operations. A standard EPROM programmer can also be used to program and erase the device.

This S29AL004D is manufactured using Spansion's 200nm process technology, and offers all the features and benefits of the Am29LV400B and MBM29LV400T/BC, which were manufactured using 320nm process technology.

The standard device S29AL004D offers access times of 70 and 90ns, allowing high speed microprocessors to operate without wait states. To eliminate bus contention the device has separate chip enable (CE#), write enable (WE#) and output enable (OE#) controls.

The S29AL004D requires only a single 3.0 volt power supply for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations.

The S29AL004D is entirely command set compatible with the JEDEC single-power-supply Flash standard. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine that controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the S29AL004D is similar to reading from other Flash or EPROM devices.

Device programming of S29AL004D occurs by executing the program command sequence. This initiates the Embedded Program algorithm-an internal algorithm that automatically times the program pulse widths and verifies proper cell margin. The Unlock Bypass mode  of S29AL004D facilitates faster programming times by requiring only two write cycles to program data instead of four.

Device erasure of S29AL004D occurs by executing the erase command sequence. This initiates the Embedded Erase algorithm-an internal algorithm that automatically preprograms the array (if it is not already programmed) before executing the erase operation. During erase, the S29AL004D automatically times the erase pulse widths and verifies proper cell margin.

The host system of S29AL004D  can detect whether a program or erase operation is complete by observing the RY/BY# pin, or by reading the DQ7 (Data# Polling) and DQ6 (toggle) status bits. After a program or erase cycle is completed, the device is ready to read array data or accept another command.

The sector erase architecture of S29AL004D allows memory sectors to be erased and reprogrammed without affecting the data contents of other sectors. The device is fully erased when shipped from the factory.

Hardware data protection measures include a low VCC detector that automatically inhibits write operations during power transitions. The hardware sector protection of S29AL004D feature disables both program and erase operations in any combination of the sectors of memory. This can be achieved in-system or via programming equipment.

The Erase Suspend of S29AL004D  feature enables the user to put erase on hold for any period of time to read data from, or program data to, any sector that is not selected for erasure. True background erase can thus be achieved.

The hardware RESET# pin of S29AL004D terminates any operation in progress and resets the internal state machine to reading array data. The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the device, enabling the system microprocessor to read the boot-up firmware from the Flash memory.

The S29AL004D offers two power-saving features. When addresses are stable for a specified amount of time, the device enters the automatic sleep mode. The system can also place the device into the standby mode. Power consumption is greatly reduced in both these modes.

Spansion's Flash technology of S29AL004D combines years of Flash memory manufacturing experience to produce the highest levels of quality, reliability and cost effectiveness. The S29AL004D electrically erases all bits within a sector simultaneously via Fowler-Nordheim tunneling. The data is programmed using hot electron injection.