Position: Home  > All Categories> Integrated Circuits (ICs) > RJK6025DPD-00#J2

RJK6025DPD-00#J2

MOSFET N CH 600V 1A MP3A

product image

RJK6025DPD-00#J2 Picture
See larger image
SeekIC No. : 003432162 Detail

RJK6025DPD-00#J2: MOSFET N CH 600V 1A MP3A

RJK6025DPD-00#J2 Data Sheet

floor Price/Ceiling Price

US $ .31~.73 / Piece | Get Latest Price
Part Number:
RJK6025DPD-00#J2
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~25
  • 25~100
  • 100~250
  • 250~500
  • 500~1000
  • Unit Price
  • $.73
  • $.65
  • $.57
  • $.52
  • $.45
  • $.4
  • $.31
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/27

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Series: * Manufacturer: Renesas Electronics America
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 15.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 600V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 1A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: * DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) @ Vgs: 5nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 37.5pF @ 25V
Power - Max: 29.7W Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: MP-3A    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)Alternate Packaging
FET Feature: Standard
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain to Source Voltage (Vdss): 600V
Series: *
Power - Max: 29.7W
Current - Continuous Drain (Id) @ 25° C: 1A
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) @ Vgs: 5nC @ 10V
Manufacturer: Renesas Electronics America
Input Capacitance (Ciss) @ Vds: 37.5pF @ 25V
Supplier Device Package: MP-3A
Rds On (Max) @ Id, Vgs: *


Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Industrial Controls, Meters
SGDM-15ADA
41AA1600E
Sensors, Transducers
GP2Y0D340K
PAN3509DH-TXWA
Audio Products
HUC1002
WM-64CT
Connectors, Interconnects
ASP-134488-01
WM4078-ND
Integrated Circuits (ICs)
TA8435H
1MB12-140
Crystals and Oscillators
WT325BI0030.000000
2SB49
View more