Features: • Low on-resistance• Low leakage current• High speed switchingSpecifications Parameter Symbol Ratings Unit Drain-source voltage VDSS 600 V Gate-source voltage VGSS ±30 V Drain current ID4 16 A Drain peak current ...
RJK6014DPK: Features: • Low on-resistance• Low leakage current• High speed switchingSpecifications Parameter Symbol Ratings Unit Drain-source voltage VDSS 600 V ...
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Features: • Low on-resistance• Low leakage current• High speed switchingSpecific...
Features: • Low on-resistance• Low leakage current• High speed switchingSpecific...
Features: • Low on-resistance• Low leakage current• High speed switchingSpecific...
Parameter |
Symbol |
Ratings |
Unit |
Drain-source voltage |
VDSS |
600 |
V |
Gate-source voltage |
VGSS |
±30 |
V |
Drain current |
ID4 |
16 |
A |
Drain peak current |
IDP1 |
32 |
A |
Body-drain diode reverse drain current |
IDR |
16 |
A |
Body-drain diode reverse drain peak current |
IDRP1 |
32 |
A |
Avalanche current |
IAP3 |
5 |
A |
Avalanche energy |
EAR3 |
1.3 |
mJ |
Channel dissipation |
Pch2 |
150 |
W |
Channel to case thermal impedance |
ch-c |
0.833 |
°C/W |
Channel temperature |
Tch |
150 |
°C |
Storage temperature |
Tstg |
−55~+150 |
°C |