Features: • Low on-resistance• Low leakage current• High speed switchingSpecifications Parameter Symbol Ratings Unit Drain-source voltage VDSS 600 V Gate-source voltage VGSS ±30 V Drain current ID4 11 A Drain peak current ...
RJK6013DPE: Features: • Low on-resistance• Low leakage current• High speed switchingSpecifications Parameter Symbol Ratings Unit Drain-source voltage VDSS 600 V ...
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Features: • Low on-resistance• Low leakage current• High speed switchingSpecific...
|
Parameter |
Symbol |
Ratings |
Unit |
| Drain-source voltage |
VDSS |
600 |
V |
| Gate-source voltage |
VGSS |
±30 |
V |
| Drain current |
ID4 |
11 |
A |
| Drain peak current |
IDP1 |
33 |
A |
| Body-drain diode reverse drain peak current |
IDR |
11 |
A |
| Avalanche current |
IDRP1 |
33 |
A |
| Avalanche energy |
IAP3 |
4 |
A |
| Channel dissipation |
EAR3 |
0.87 |
mJ |
| Channel dissipation |
Pch2 |
100 |
W |
| Channel to case thermal impedance |
ch-c |
1.25 |
°C/W |
| Channel temperature |
Tch |
150 |
°C |
| Storage temperature |
Tstg |
−55~+150 |
°C |