RHU003N03 Selling Leads, Price trend, RHU003N03 DataSheet download, circuit diagram from SeekIC.com

Features: · Low On-resistance.· 4V drive.Application·SwitchingSpecifications Parameter Symbol Rating Unit Drain-source voltage VDSS 30 V Gate-source voltage VGSO ±20 V Drain current Continuous ID ±300 mA Pulsed IDP *1 ±1.2 A Total...

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SeekIC No. : 004477248 Detail

RHU003N03: Features: · Low On-resistance.· 4V drive.Application·SwitchingSpecifications Parameter Symbol Rating Unit Drain-source voltage VDSS 30 V Gate-source voltage VGSO ...

RHU003N03 Data Sheet

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Part Number:: RHU003N03
Supply Ability:: 5000

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Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/12/19

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Recent History
What is this?

RHU002N06 evaluate
Features: 1) Low on-resistance.2) High ESD.3) High-speed switching.4) Low-voltage drive (4V).5) Ea...
RHU002N06T106 evaluate
US $.06 - .29 / Piece

MOSFET N-CH 60V 200MA SOT-323
RHU003N03T106 evaluate
US $.07 - .27 / Piece

MOSFET N-CH 30V 300MA SOT-323

Product Details

Description

Features:

· Low On-resistance.
· 4V drive.

Application

·Switching

Specifications

Parameter		Symbol	Rating	Unit
Drain-source voltage		V_DSS	30	V
Gate-source voltage		V_GSO	±20	V
Drain current	Continuous	I_D	±300	mA
Drain current	Pulsed	I_DP ^*1	±1.2	A
Total power dissipation		P_D^*2	200	mW
Channel temperature		Tch	150	°C
Range of storage temperature		Tstg	-55 to +125	°C

*1 Pw10s, Duty cycle1%
*2 Each terminal mounted on a recommended land

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RHU003N03

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