MOSFET N-CH 60V 200MA SOT-323
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 60 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 200 mA | ||
Resistance Drain-Source RDS (on) : | 2.8 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | UMT-3 | Packaging : | Reel |
Technical/Catalog Information | RHU002N06T106 |
Vendor | Rohm Semiconductor(VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25° C | 200mA |
Rds On (Max) @ Id, Vgs | 2.4 Ohm @ 200mA, 10V |
Input Capacitance (Ciss) @ Vds | 15pF @ 10V |
Power - Max | 200mW |
Packaging | Cut Tape (CT) |
Gate Charge (Qg) @ Vgs | 4.4nC @ 10V |
Package / Case | SC-70-3, SOT-323-3 |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | RHU002N06T106 RHU002N06T106 RHU002N06T106CT ND RHU002N06T106CTND RHU002N06T106CT |