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RHU002N06T106

MOSFET N-CH 60V 200MA SOT-323

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SeekIC No. : 00151058 Detail

RHU002N06T106: MOSFET N-CH 60V 200MA SOT-323

RHU002N06T106 Data Sheet

floor Price/Ceiling Price

US $ .06~.29 / Piece | Get Latest Price
Part Number:
RHU002N06T106
Mfg:
ROHM Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~500
  • Unit Price
  • $.29
  • $.17
  • $.11
  • $.06
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/19

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 200 mA
Resistance Drain-Source RDS (on) : 2.8 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : UMT-3 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 200 mA
Resistance Drain-Source RDS (on) : 2.8 Ohms
Package / Case : UMT-3


Parameters:

Technical/Catalog InformationRHU002N06T106
VendorRohm Semiconductor(VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C200mA
Rds On (Max) @ Id, Vgs2.4 Ohm @ 200mA, 10V
Input Capacitance (Ciss) @ Vds 15pF @ 10V
Power - Max200mW
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs4.4nC @ 10V
Package / CaseSC-70-3, SOT-323-3
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names RHU002N06T106
RHU002N06T106
RHU002N06T106CT ND
RHU002N06T106CTND
RHU002N06T106CT



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