Features: 1) Low on-resistance.2) High ESD.3) High-speed switching.4) Low-voltage drive (4V).5) Easily designed drive circuits.6) Easy to use in parallel.Specifications Parameter Symbol Limits Unit Drain-source voltage VDSS 60 V Gate-source voltage VGSS ±20 ...
RHU002N06: Features: 1) Low on-resistance.2) High ESD.3) High-speed switching.4) Low-voltage drive (4V).5) Easily designed drive circuits.6) Easy to use in parallel.Specifications Parameter Symbol ...
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Parameter |
Symbol |
Limits |
Unit | |
Drain-source voltage |
VDSS |
60 |
V | |
Gate-source voltage |
VGSS |
±20 |
V | |
Drain current | Continuous |
ID |
200 |
mA |
Pulsed |
IDP*1 |
800 |
mA | |
Source current | Continuous |
IS |
200 |
mA |
Pulsed |
ISP*1 |
800 |
mA | |
Total power dissipation |
PD*2 |
200 |
mW | |
Channel temperature |
Tch |
150 |
||
Storage temperature |
Tstg |
-55to+150 |