Features: • 7A, 350V and 400V• rDS(ON) = 0.75W• SOA is Power Dissipation Limited• Nanosecond Switching Speeds• Linear Transfer Characteristics• High Input Impedance• Majority Carrier Device• Related Literature - TB334 Guidelines for Soldering Surfac...
RFP7N35: Features: • 7A, 350V and 400V• rDS(ON) = 0.75W• SOA is Power Dissipation Limited• Nanosecond Switching Speeds• Linear Transfer Characteristics• High Input Impedan...
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RFM7N35 | RFM7N40 | RFP7N35 | RFP7N40 | UNITS | |
Drain to Source Voltage (Note 1) VDSS | 350 | 400 | 350 | 400 | V |
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR | 350 | 400 | 350 | 400 | V |
Continuous Drain Current ID | 7 | 7 | 7 | 7 | A |
Pulsed Drain Current (Note 3) IDM | 15 | 15 | 15 | 15 | A |
Gate to Source Voltage VGS | ±20 | ±20 | ±20 | ±20 | V |
Maximum Power Dissipation PD | 100 | 100 | 100 | 100 | W |
Continuous (TC= 100oC, VGS = 10V) (Figure 2) ID | 0.8 | 0.8 | 0.8 | 0.8 | W/oC |
Operating and Storage Temperature .TJ, TSTG | -55 to 150 | -55 to 150 | -55 to 150 | -55 to 150 | oC |
Maximum Temperature for Soldering | |||||
Leads at 0.063in (1.6mm) from Case for 10s. TL | 300 | o C | |||
Package Body for 10s, See Techbrief 334 Tpkg | 260 | o C |
RFP7N35 are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated
circuits.