RFP70N03

Packaging :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Package / Case : TO-220AB
Continuous Drain Current : 70 A
Resistance Drain-Source RDS (on) : 0.01 Ohms


Features:

• 70A, 30V
• r _DS(ON) = 0.010W
• Temperature Compensating PSPICE^® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve (Single Pulse)
• 175oC Operating Temperature
• Related Literature
  - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

			UNITS
Drain to Source Voltage (Note 1)	VDSS	30	V
Drain to Gate Voltage (RGS = 20kW)(Note 1)	VDGR	30	V
Gate to Source Voltage	VGS	±20	V
Continuous Drain Current (Figure 2)	ID	70	A
Pulsed Drain Current	IDM	200	A
Pulsed Avalanche Rating	EAS	Figure 5,13,14
Power Dissipation	PD	150	W
Derate Above 25		1.0	W/
Operating and Storage Temperature	TJ, TSTG	-55 to 175
Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. Package Body for 10s, See Techbrief 334	T L Tpkg	300 260

CAUTION: Stresses above those listed in "Absolute M aximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Description

These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. RFP70N03 were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits.

Formerly developmental type TA49025.

Parameters:

Technical/Catalog Information	RFP70N03
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	70A
Rds On (Max) @ Id, Vgs	10 mOhm @ 70A, 10V
Input Capacitance (Ciss) @ Vds	3300pF @ 25V
Power - Max	150W
Packaging	Tube
Gate Charge (Qg) @ Vgs	260nC @ 20V
Package / Case	TO-220AB
FET Feature	Standard
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	RFP70N03 RFP70N03