RFP70N06

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 0.014 Ohms
Continuous Drain Current : 70 A


Features:

• 70A, 60V
• r _DS(on) = 0.014W
• Temperature Compensated PSPICE^® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve (Single Pulse)
• 175 Operating Temperature
• Related Literature
   - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

			UNITS
Drain-Source Voltage (Note 1)	VDSS	60	V
Drain-Gate Voltage.(RGS = 20kW) (Note 1)	VDGR	60	V
Continuous Drain Current	ID	70	A
Pulsed Drain Current (Note 3)	IDM	Refer to Peak Current Curve
Gate to Source Voltage	VGS	±20	A
Single Pulse Avalanche Rating	EAS	(Refer to UIS Curve)
Power Dissipation	PD	150	W
Linear Derating Factor		1.0	W/
Operating and Storage Temperature	TJ, TSTG	-55 to 175
Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. Leads at 0.063in (1.6mm) from Case for 10s.	T L Tpkg	300 260

CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Description

These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. RFP70N06 were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits.

Formerly developmental type TA49007.

Parameters:

Technical/Catalog Information	RFP70N06
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	70A
Rds On (Max) @ Id, Vgs	14 mOhm @ 70A, 10V
Input Capacitance (Ciss) @ Vds	2250pF @ 25V
Power - Max	150W
Packaging	Tube
Gate Charge (Qg) @ Vgs	156nC @ 20V
Package / Case	TO-220AB
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	RFP70N06 RFP70N06