Transistor Polarity
: N-Channel
Gate-Source Breakdown Voltage
: +/- 20 V
Configuration
: Single
Maximum Operating Temperature
: + 175 C
Mounting Style
: Through Hole
Packaging
: Tube
Package / Case
: TO-220AB
Continuous Drain Current
: 50 A
Drain-Source Breakdown Voltage
: 60 V
Resistance Drain-Source RDS (on)
: 0.022 Ohms
Features: • 50A, 60V
• r DS(ON) = 0.022W
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175 Operating TemperatureSpecifications
| |
|
|
UNITS |
| Drain to Source Voltage (Note 1) |
VDSS |
60 |
V |
| Drain to Gate Voltage (RGS = 20kW)(Note 1) |
VDGR |
60 |
V |
| Gate to Source Voltage |
VGS |
±20 |
V |
| Pulsed Drain Current (Figure 2) |
ID |
50 |
A |
| Pulsed Drain Current |
IDM |
(Figure 5) |
|
| Pulse Avalanche Rating |
EAS |
(Figure 6, 14, 15) |
|
| Power Dissipation |
PD |
131 |
W |
| Linear Derating Factor |
|
0.877 |
W/ |
| Operating and Storage Temperature |
TJ, TSTG |
-55 to 175 |
|
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s.
Package Body for 10s, See Techbrief 334 |
TL
Tpkg |
300
260 |
|
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
DescriptionThese N-Channel power MOSFETs RFP50N06 are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits.
Formerly developmental type TA49018.
Parameters: | Technical/Catalog Information | RFP50N06 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 50A |
| Rds On (Max) @ Id, Vgs | 22 mOhm @ 50A, 10V |
| Input Capacitance (Ciss) @ Vds | 2020pF @ 25V |
| Power - Max | 131W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 150nC @ 20V |
| Package / Case | TO-220AB |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | RFP50N06
RFP50N06
|
RFP50N06 Data Sheet
