RFP50N06

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Continuous Drain Current : 50 A
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 0.022 Ohms


Features:

• 50A, 60V
• r _DS(ON) = 0.022W
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175 Operating Temperature


Specifications

			UNITS
Drain to Source Voltage (Note 1)	VDSS	60	V
Drain to Gate Voltage (RGS = 20kW)(Note 1)	VDGR	60	V
Gate to Source Voltage	VGS	±20	V
Pulsed Drain Current (Figure 2)	ID	50	A
Pulsed Drain Current	IDM	(Figure 5)
Pulse Avalanche Rating	EAS	(Figure 6, 14, 15)
Power Dissipation	PD	131	W
Linear Derating Factor		0.877	W/
Operating and Storage Temperature	TJ, TSTG	-55 to 175
Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. Package Body for 10s, See Techbrief 334	TL Tpkg	300 260

CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Description

These N-Channel power MOSFETs RFP50N06 are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits.

Formerly developmental type TA49018.

Parameters:

Technical/Catalog Information	RFP50N06
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	50A
Rds On (Max) @ Id, Vgs	22 mOhm @ 50A, 10V
Input Capacitance (Ciss) @ Vds	2020pF @ 25V
Power - Max	131W
Packaging	Tube
Gate Charge (Qg) @ Vgs	150nC @ 20V
Package / Case	TO-220AB
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	RFP50N06 RFP50N06