Features: • 50A, 50V• rDS(ON) = 0.022W• UIS Rating Curve (Single Pulse)• 175oC Operating TemperatureSpecifications RFG50N05, RFP50N05 UNITS Drain to Source Voltage (Note 1) VDSS 50 V Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR 50 V Continuous Drain C...
RFP50N05: Features: • 50A, 50V• rDS(ON) = 0.022W• UIS Rating Curve (Single Pulse)• 175oC Operating TemperatureSpecifications RFG50N05, RFP50N05 UNITS Drain to Source Voltage...
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RFG50N05, RFP50N05 | UNITS | |
Drain to Source Voltage (Note 1) VDSS | 50 | V |
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR | 50 | V |
Continuous Drain Current ID | 50 | A |
Pulsed Drain Current (Note 3) IDM | 120 | A |
Gate to Source Voltage VGS | ±20 | V |
Power Dissipation PD | 132 | W |
Derate Above 25oC | 0.88 | A |
Pulsed Avalanche Rating UIS | Refer to UIS SOA | |
Operating and Storage Temperature .TJ, TSTG | -55 to 75 | o C |
Maximum Temperature for Soldering | ||
Leads at 0.063in (1.6mm) from Case for 10s. TL | 300 | o C |
Package Body for 10s, See Techbrief 334 Tpkg | 260 | o C |
These are N-Channel power MOSFET'S manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. RFP50N05 were designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and emitter switches for bipolar transistors. Formerly developmental type TA09772