RFP50N05L

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Continuous Drain Current : 50 A
Gate-Source Breakdown Voltage : +/- 10 V
Drain-Source Breakdown Voltage : 50 V
Resistance Drain-Source RDS (on) : 0.022 Ohms


Features:

• 50A, 50V
• rDS(ON) = 0.022W
• UIS SOA Rating Curve (Single Pulse)
• Design Optimized for 5V Gate Drive
• Can be Driven Directly from CMOS, NMOS, TTL Circuits
• Compatible with Automotive Drive Requirements
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards"


Specifications

	RFG50N05L	RFP50N05L	UNITS
Drain to Source Voltage (Note 1) VDSS	50	50	V
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR	50	50	V
Continuous Drain Curren ID	50	50	A
Pulsed Drain Current (Note 3) IDM	130	130	V
Maximum Power Dissipation PD	±10	±10	V
Maximum Power Dissipation	110	110	W
Operating and Storage Temperature .TJ, TSTG	-55 to 150	-55 to 150	o C
Linear Derating Factor	0.88	0.88	W/oC
Leads at 0.063in (1.6mm) from Case for 10s. TL	300	300	o C
Package Body for 10s, See Techbrief 334 (for TO-218AC) Tpkg	260	260	o C

Description

RFP50N05L are logic-level N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic-level (5V) driving sources in applications such as programmable controllers, automotive switching, switching regulators, switching converters, motor relay drivers and emitter switches for bipolar transistors. RFP50N05L performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V - 5V range, thereby facilitating true on-off power control directly from integrated circuit supply voltages.

Formerly developmental type TA09872.

Parameters:

Technical/Catalog Information	RFP50N05L
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	50V
Current - Continuous Drain (Id) @ 25° C	50A
Rds On (Max) @ Id, Vgs	22 mOhm @ 50A, 5V
Input Capacitance (Ciss) @ Vds	-
Power - Max	110W
Packaging	Tube
Gate Charge (Qg) @ Vgs	140nC @ 10V
Package / Case	TO-220AB
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	RFP50N05L RFP50N05L