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RFD14N05L

MOSFET TO-251AA N-Ch Power

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RFD14N05L: MOSFET TO-251AA N-Ch Power

RFD14N05L Data Sheet

floor Price/Ceiling Price

US $ .29~.43 / Piece | Get Latest Price
Part Number:
RFD14N05L
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.43
  • $.38
  • $.33
  • $.29
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/12/13

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 50 V
Gate-Source Breakdown Voltage : +/- 10 V Continuous Drain Current : 14 A
Resistance Drain-Source RDS (on) : 0.1 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : IPAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : IPAK
Gate-Source Breakdown Voltage : +/- 10 V
Drain-Source Breakdown Voltage : 50 V
Continuous Drain Current : 14 A
Resistance Drain-Source RDS (on) : 0.1 Ohms


Features:

• 14A, 50V
• rDS(ON) = 0.100W
• Temperature Compensating PSPICE™ Model
• Can be Driven Directly from CMOS, NMOS, andTTL Circuits
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature- TB334 "Guidelines for Soldering Surface MountComponents to PC Boards"


Specifications

  RFD14N05L, RFD14N05LSM,
RFP14N05L		 UNITS
Drain to Source Voltage (Note 1) VDSS 50 V
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR 50 V
Continuous Drain Current ID 14 A
Pulsed Drain Current (Note 3) IDM 120 A
Gate to Source Voltage VGS ±20 V
EAS
Power Dissipation PD
25oC		 48 W
Derate above 25oC 0.32 A
Pulsed Avalanche Rating UIS Refer to UIS SOA  
Operating and Storage Temperature .TJ, TSTG -55 to 75 o C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. TL 300 o C
Package Body for 10s, See Techbrief 334 . Tpkg 260 o C



Parameters:

Technical/Catalog InformationRFD14N05L
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)50V
Current - Continuous Drain (Id) @ 25° C14A
Rds On (Max) @ Id, Vgs100 mOhm @ 14A, 5V
Input Capacitance (Ciss) @ Vds 670pF @ 25V
Power - Max48W
PackagingTube
Gate Charge (Qg) @ Vgs40nC @ 10V
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names RFD14N05L
RFD14N05L



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