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RFD14N05

MOSFET TO-251AA N-Ch Power

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RFD14N05: MOSFET TO-251AA N-Ch Power

RFD14N05 Data Sheet

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Part Number:
RFD14N05
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 50 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 14 A
Resistance Drain-Source RDS (on) : 0.1 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : IPAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : IPAK
Drain-Source Breakdown Voltage : 50 V
Continuous Drain Current : 14 A
Resistance Drain-Source RDS (on) : 0.1 Ohms


Features:

• 14A, 50V
• rDS(ON) = 0.100W
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

  RFD14N05, RFD14N05SM,
RFP14N05		 UNITS
Drain to Source Voltage (Note 1) VDSS 50 V
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR 50 V
Continuous Drain Current ID 14 A
Pulsed Drain Current (Note 3) IDM 120 A
Gate to Source Voltage VGS ±20 V
EAS
Power Dissipation PD
25oC		 48 W
Derate above 25o C 0.32 A
Pulsed Avalanche Rating UIS Refer to UIS SOA  
Operating and Storage Temperature .TJ , TSTG -55 to 75 o C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. TL 300 o C
Package Body for 10s, See Techbrief 334 . Tpkg 260 o C



Parameters:

Technical/Catalog InformationRFD14N05
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)50V
Current - Continuous Drain (Id) @ 25° C14A
Rds On (Max) @ Id, Vgs100 mOhm @ 14A, 10V
Input Capacitance (Ciss) @ Vds 570pF @ 25V
Power - Max48W
PackagingTube
Gate Charge (Qg) @ Vgs40nC @ 20V
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names RFD14N05
RFD14N05



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