RF2302

Features: • 25dB Linear Gain Control range• +14dBm OP1dB at 3.5V (836MHz)• Single 3V to 6V Supply• 14dB Max Gain at 836MHz• 10dB Max Gain at 1900MHz• 4dB Noise Figure at 836MHzApplication• CDMA Cellular/PCS and JCDMA Systems• TDMA Cellular/PCS System...

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RF2302 Picture
SeekIC No. : 004476218 Detail

RF2302: Features: • 25dB Linear Gain Control range• +14dBm OP1dB at 3.5V (836MHz)• Single 3V to 6V Supply• 14dB Max Gain at 836MHz• 10dB Max Gain at 1900MHz• 4dB Noise Fi...

floor Price/Ceiling Price

Part Number:
RF2302
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/11/24

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Product Details

Description



Features:

• 25dB Linear Gain Control range
• +14dBm OP1dB at 3.5V (836MHz)
• Single 3V to 6V Supply
• 14dB Max Gain at 836MHz
• 10dB Max Gain at 1900MHz
• 4dB Noise Figure at 836MHz



Application

• CDMA Cellular/PCS and JCDMA Systems
• TDMA Cellular/PCS Systems
• GSM Systems
• Wireless Local Loop Systems
• Wideband CDMA Systems
• PDC Systems (950MHz and 1450MHz)



Pinout

  Connection Diagram


Specifications

Parameter
Value
Unit
Supply Voltage
0 to +8.0
VDC
Power Down Voltage
0 to +3.1
VDC
Gain Control Voltage
0 to +3.1
VDC
DC Current
100
mA
Output Load VSWR
12:1
dBm
Operating Ambient Temperature
-20 to +85
°C
Storage Temperature
-40 to +150
°C



Description

The RF2302 is a broadband linear variable gain amplifier that was designed specifically for digital communications systems that require linear amplification over a wide gain control range. RF2302 is suitable for use in CDMA or TDMA systems in the cellular or PCS band, in DAMPS systems, and in PDC systems. Operating supply voltage ranges from 3V to 6V. RF2302 operates over a large frequency band, from 100MHz to 2000MHz, and is tuned to a specific frequency band with an output bias feed inductor and blocking capacitor. Bias optimization may be achieved by adjusting the voltage to pin 8 (PD). The IC is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process and is featured in a new standard miniature 8-lead plastic MSOP package.




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