Features: • Single 2.7V to 6.0V Supply• +4dBm Output Power• 21dB Small Signal Gain• 50dB Reverse Isolation at 900MHz• Low DC Current Consumption of 14mA• 300MHz to 2500MHz OperationApplication• Local Oscillator Buffer Amplifiers• FDD and TDD Communic...
RF2301: Features: • Single 2.7V to 6.0V Supply• +4dBm Output Power• 21dB Small Signal Gain• 50dB Reverse Isolation at 900MHz• Low DC Current Consumption of 14mA• 300MHz t...
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Parameter |
Rating |
Unit |
Supply Voltage (VDD) DC Supply Current Input RF Power Operating Ambient Temperature Storage Temperature |
-0.5 to +6.5 60 +10 -40 to +85 -40 to +150 |
VDC mA dBm °C °C |
The RF2301 is a high reverse isolation buffer amplifier. RF2301 is manufactured on a low-cost Gallium Arsenide MESFET process, and has been designed for use as a general purpose buffer in high-end communication systems operating at frequencies from less than 300MHz to higher than 2500MHz. With +5dBm output power, RF2301 may also be used as a driver in transmitter applications. RF2301 is packaged in an 8-lead plastic package. The product is self-contained, requiring just a resistor and blocking capacitors to operate. The output power, combined with 50dB reverse isolation at 900MHz allows excellent buffering of LO sources to impedance changes. The device can be used in 3V battery applications. The unit has a total gain of 17dB with only 14mA current from a 3V supply.