Features: • 1MHz to 600MHz Operation• Over 800mW CW Output Power• 35dB Small Signal Gain• Single 2.7V to 6.5V Supply• 45% Efficiency• Digitally Controlled Power Down ModeApplication• Digital Communication Systems• Spread-Spectrum Communication System...
RF2114: Features: • 1MHz to 600MHz Operation• Over 800mW CW Output Power• 35dB Small Signal Gain• Single 2.7V to 6.5V Supply• 45% Efficiency• Digitally Controlled Power D...
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Parameter |
Rating |
Unit |
Supply Voltage |
-0.5 to +8.5 |
VDC |
Gain Control Voltage(VPD) |
-0.5 to +5.0 |
V |
DC Supply Current |
3500 |
mA |
Input RF Power |
+12 |
dBm |
Output Load VSWR |
20:1 |
|
Operating Ambient Temperature |
-40 to +85 |
|
Storage Temperature |
-40 to +150 |
The RF2114 is a medium to high power linear amplifierIC. RF2114 is manufactured on an advanced GalliumArsenide Heterojunction Bipolar Transistor (HBT) process,and has been designed for use as the final linearRF amplifier in UHF radio transmitters operating between1MHz and 600MHz. RF2114 may also be used as a driveramplifier in higher power applications. RF2114 is selfcontainedwith the exception of the output matching network,power supply feed line, and bypass capacitors. Thedevice can be used in 3-cell battery applications. Themaximum CW output at 3V is 125mW. The unit has atotal gain of 35dB, depending upon the output matching etwork.