Features: • 450MHz to 1000MHz Operation• Up to 750mW CW Output Power• 31dB Small Signal Gain• Single 2.7V to 7.5V Supply• 47% Efficiency• Digitally Controlled Power Down ModeApplication• Digital Communication Systems• Spread-Spectrum Communication Sy...
RF2103P: Features: • 450MHz to 1000MHz Operation• Up to 750mW CW Output Power• 31dB Small Signal Gain• Single 2.7V to 7.5V Supply• 47% Efficiency• Digitally Controlled Pow...
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Parameter |
Rating |
Unit |
Supply Voltage |
-0.5 to +7.5 |
VDC |
Gain Control Voltage(VPD) |
-0.5 to +5 |
V |
DC Supply Current |
350 |
mA |
Input RF Power |
+12 |
dBm |
Output Load VSWR |
10:1 |
|
Operating Case Temperature |
-40 to +100 |
|
Operating Ambient Temperature |
-40 to +85 |
|
Storage Temperature |
-40 to +150 |
The RF2103P is a medium power linear amplifier IC. RF2103P is manufactured on an advanced Gallium ArsenideHeterojunction Bipolar Transistor (HBT) process, and haseen designed for use as the final linear RF amplifier inUHF radio transmitters operating between 450MHz and1000MHz. RF2103P may also be used as a driver amplifier inhigher power applications. RF2103P is self-containedwith the exception of the output matching network, powersupply feed line, and bypass capacitors, and it producesan output power level of 750mW (CW). The device canbe used in 3 cell battery applications. The maximum CWoutput at 3.6V is 175mW. The unit has a total gain of 1dB, depending upon the output matching network.