RF2103

The RF2103 is a kind of power linear amplifier IC. RF2103 is fabricated with an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and RF2103 has been designed for use as the dual linear RF amplifier in UHF radio transmitters operating between RF amplifier in high power applications. The device is available in a 14-lead plastic or ceramic SOIC package. RF2103  can be used in 3 cell battery applications. The unit has a total gain of 31 dB, depending on the output matchinh network.

There are some features of RF2103 as follows: (1)450 MHz to 1000 MHz operation; (2)up to 750 mW CW output power; (3)31 dB small signal gain; (4)single 2.7 to 7.5 V supply; (5)42% efficiency; (6)digitally controlled power down mode. The typical applications include: (1)digital communication systems; (2)spread spectrum communication systems; (3)driver for higher power linear applications; (4)portable battery powered equipment; (5)commercial and consumer systems; (6)base station equipment.

The following of RF2103 is about the absolute maximum ratings: (1)supply voltage, VCC: +7.5 Vdc; (2)FPA DC input current: 300 mA; (3)bias voltage, Vb: +5 V; (4)input RF power: +6 dBm; (5)case temperature: +100. Then is about the specifications at T=25, VCC=5.8 V, Vb=5.0 V, ZLOAD=18, Pin=0 dBm, 915 MHz, unless indicated otherwise: (1)frequency range: 450 to 1000 MHz; (2)maximum output power (at VCC=7.5 V): 750 mW typ; (3)maximum output power (at VCC=5.8 V): 450 mW typ; (4)second harmonic (without external second harmonic trap): -25 dBc typ; (5)third harmonic: -30 dBc typ; (6)output noise power: <-125 dBm/Hz typ; (7)Zin (with external matching network): 50 typ; (8)power supply voltage: 2.7 to 6.5 V; (9)power supply idle current: 45 mA typ and 80 mA max.