Features: • Single 2.7V to 6.5V Supply• Up to 1.2W CWOutput Power• 33dB Small Signal Gain• 48% Efficiency• Digitally Controlled Power Down Mode• Small Package Outline (0.25 x 0.25 )Application• 900 MHz ISM Band Applications• 400 MHz Industrial Radio...
RF2105L: Features: • Single 2.7V to 6.5V Supply• Up to 1.2W CWOutput Power• 33dB Small Signal Gain• 48% Efficiency• Digitally Controlled Power Down Mode• Small Package Out...
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Parameter |
Rating |
Unit |
Supply Voltage(VCC) |
-0.5 to +6.0 |
VDC |
Control Voltage(VPD) |
-0.5 to +3.0 |
VDC |
DC Supply Current |
700 |
mA |
Input RF Power |
+12 |
dBm |
Output Load |
20:1 |
|
Operating Case Temperature |
-40 to +100 |
|
Operating Ambient Temperature |
-40 to +85 |
|
Storage Temperature |
-40 to +150 |
The RF2105L is a high power, high efficiency linear amplifier IC. RF2105L is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in digital cellular phone transmitters or ISM applications requiring linear amplification. RF2105L is packaged in a 16-lead ceramic package with a backside ground. The device is self-contained with the exception of the output matching network and power supply feed line.