MOSFET 30V; 2A; N-Channel Single
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 30 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | - 2 A | ||
Resistance Drain-Source RDS (on) : | 135 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TUMT-5 | Packaging : | Reel |
Technical/Catalog Information | QS5U33TR |
Vendor | Rohm Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | P-Channel |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 2A |
Rds On (Max) @ Id, Vgs | 135 mOhm @ 2A, 10V |
Input Capacitance (Ciss) @ Vds | 310pF @ 10V |
Power - Max | 900mW |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 3.4nC @ 5V |
Package / Case | TSMT5 |
FET Feature | Diode (Isolated) |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | QS5U33TR QS5U33TR QS5U33TRTR ND QS5U33TRTRND QS5U33TRTR |