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QS5U16TR

MOSFET N-CH 30V 2A

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SeekIC No. : 00150905 Detail

QS5U16TR: MOSFET N-CH 30V 2A

QS5U16TR Data Sheet

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US $ .14~.3 / Piece | Get Latest Price
Part Number:
QS5U16TR
Mfg:
ROHM Semiconductor
Supply Ability:
5000

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  • Unit Price
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  • Processing time
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Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : 12 V Continuous Drain Current : 2 A
Resistance Drain-Source RDS (on) : 100 mOhms at 4.5 V Configuration : Single
Maximum Operating Temperature : + 125 C Mounting Style : SMD/SMT
Package / Case : TSMT-5 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : 12 V
Maximum Operating Temperature : + 125 C
Continuous Drain Current : 2 A
Resistance Drain-Source RDS (on) : 100 mOhms at 4.5 V
Package / Case : TSMT-5


Parameters:

Technical/Catalog InformationQS5U16TR
VendorRohm Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C2A
Rds On (Max) @ Id, Vgs100 mOhm @ 2A, 4.5V
Input Capacitance (Ciss) @ Vds 175pF @ 10V
Power - Max900mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs3.9nC @ 4.5V
Package / CaseTSMT5
FET FeatureDiode (Isolated)
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names QS5U16TR
QS5U16TR



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