QS5U12

Features of the QS5U12 are:(1)the QS5U12 combines Nch MOSFET with a schottky barrier diode in a single TSMT5 package;(2)Nch MOSCFET have a low on-state resistance with a fast switching;(3)Nch MOSFET is reacted a low voltage drive (2.5V);(4)the independently connected schottky barrier diode have a low forward voltage.

The absolute maximum ratings MOSFET of the QS5U12 can be summarized as:(1):the parameter is drain-source voltage,the symbol is VDSS,the limits is 30,the unit is V;(2):the parameter is gate-source voltage,the symbol is VGSS,the limits is 12,the unit is V;(3):the parameter is drain current continuous,the symbol is ID,the limits is ±2.0,the unit is A;(4):the parameter is drain current pulsed,the symbol is IDP,the limits is ±8.0,the unit is A;(5):the parameter is source current continuous,the symbol is IS,the limits is 0.8,the unit is A;(6):the parameter is source current pulsed,the symbol is ISP,the limits is 3.2,the unit is A;(7):the parameter is channel temperature,the symbol is TCH,the limits is 150,the unit is .

The absolute maximum ratings Di of the QS5U12 can be summarized as:(1):the parameter is repetitive peak reverse voltage,the symbol is VRM,the limits is 25,the unit is V;(2):the parameter is reverse voltage,the symbol is VR,the limits is 20,the unit is V;(3):the parameter is forward current,the symbol is IF,the limits is 1.0,the unit is A;(4):the parameter is forward current surge peak,the symbol is IFSM,the limits is 3.0,the unit is A;(5):the parameter is junction temperature,the symbol is Tj,the limits is 150,the unit is ;(6):the parameter is total power dissipaton,the symbol is PD,the limits is 1.0,the unit is W;(7):the parameter is range of storage temperature,the symbol is Tstg,the limits is -40 to 125,the unit is .