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QS5U13

Features: · The QS5U13 combines Nch MOSFET with a Schottky barrier diode in a single TSMT5 package.· Nch MOSFET have a low on-state resistance with a fast switching.· Nch MOSFET is reacted a low voltage drive (2.5V).· The Independently connected Schottky barrier diode have a low forward voltage.Ap...

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SeekIC No. : 004468536 Detail

QS5U13: Features: · The QS5U13 combines Nch MOSFET with a Schottky barrier diode in a single TSMT5 package.· Nch MOSFET have a low on-state resistance with a fast switching.· Nch MOSFET is reacted a low vol...

QS5U13 Data Sheet

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Part Number:
QS5U13
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/7/26

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Product Details

Description



Features:

·  The QS5U13 combines Nch MOSFET with a Schottky barrier diode in a single TSMT5 package.
·  Nch MOSFET have a low on-state resistance with a fast switching.
·  Nch MOSFET is reacted a low voltage drive (2.5V).
·  The Independently connected Schottky barrier diode have a low forward voltage.


Application

Load switch, DC / DC conversion


Specifications

< MOSFET >
Parameter
Symbol
Limits
Unit
Drain−source voltage
VDSS
30
V
Gate−source voltage
VGSS
12
V
Drain current Continuous
ID
±2.0
A
Pulsed
IDP
±8.0
A PW10 S,Duty cycle 1%
Source current
(Body diode)		 Continuous
IS
0.8
A
Pulsed
ISP
3.2
A PW10 S,Duty cycle 1%
Channel temperature
Tch
150

< Di >
Repetitive peak reverse voltage
VRM
30
 V
Reverse voltage
VR
20
 V
Forward current
IF
0.5
 A
Forward current surge peak
IFSM
2.0
 A 60Hz / 1CYC
Junction temperature
Tj
125

< MOSFET AND Di >
Total power dissipation
PD
1.0
 W / TOTAL MOUNTED ON
A CERAMIC BOARD
Range of strage temperature
Tstg
−50∼125



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