QS5U33

      QS5U33 is Drive Pch+SBD MOSFET of 4V.The Unit of Structure Dimensions is mm,and it has Silicon P-channel MOSFET,Schottky Barrier DIODE
      There are four Features of QS5U33.The first of is that the QS5U33 combines Pch MOSFET with a Schottky barrier diode in TSMT5 package.The second of is that it has Low on-state resistance with fast switching.The third of is that it has Low voltage drive (4V).
The forth of is that it is Built-in schottky barrier diode has low forward voltage.The Applications of QS5U33 is Load switch and DC/DC conversion. The Packaging specifications of QS5U33 has three types .The Package of it taping.The Code of TR.The asic ordering unit (pieces) of 3000.
      The following is about Absolute maximum ratings (Ta=25°C) of QS5U33 .The symbol of Drain-source voltage is VDSS,the unit of it is V,and the limits of it is -30V.The symbol of Gate-source voltage is VGSS,the unit of it is V ,and the limits of it is ±20.°C.The symbol of Channel temperature is Tch,the unit of it is °C ,and the limits of it is 150.The symbol of Power dissipation is PD,the unit of it is W/ELEMENT ,and the limits of it is 0.9.The symbol of Repetitive peak reverse voltage is VRM,the unit of it is V ,and the limits of it is 25.The symbol of Reverse voltage is VR,the unit of it is V ,and the limits of it is 20.The symbol of Forward current is IF,the unit of it is A ,and the limits of it is 1.0.