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QS5U27

Features: · The QS5U27 conbines Pch Treueh MOSFET with a Schottky barrier diode in a single TSMT5 package.· Pch Treueh MOSFET have a low on-state resisternce with a fast switching.· Pch Treueh MOSFET is neucted a low voltage drive (2.5V). · The independently connected Schottky barrier diode have a...

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SeekIC No. : 004468542 Detail

QS5U27: Features: · The QS5U27 conbines Pch Treueh MOSFET with a Schottky barrier diode in a single TSMT5 package.· Pch Treueh MOSFET have a low on-state resisternce with a fast switching.· Pch Treueh MOSFE...

QS5U27 Data Sheet

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Part Number:
QS5U27
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· The QS5U27 conbines Pch Treueh MOSFET with a Schottky barrier diode in a single TSMT5 package.
·  Pch Treueh MOSFET have a low on-state resisternce with a fast switching.
·  Pch Treueh MOSFET is neucted a low voltage drive (2.5V).
· The independently connected Schottky barrier diode have a low forward voltage.


Application

· load switch, DC/DC conversion


Specifications

Parameter
Symbol
Limits
Unit
Drain-source voltage
VDSS
−20
V
Gate-source voltage
VGSS
±12
V
Drain current Continuous
ID
±1.5
A
Pulsed
IDP
±6.0
A∗1
Source current
(Body diode)		 Continuous
IS
−0.75
A
Pulsed
ISP
−3.0
A∗1
Channel temperature
Tch
150
°C


Parameter
Symbol
Limits
Unit
Repetitive peak reverse voltage
VRM
30
V
Reverse voltage
VR
20
V
Forward current
IF
0.5
A
Forward current surge peak
IFSM
0.2
A∗2
Junction temperature
Tj
125
°C


Parameter
Symbol
Limits
Unit
Total power dissipatino
PD
1.0
W/TOTAL∗3
Range of strage temperature
Tstg
−40~+125
°C



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