QS5U26TR

Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 12 V
Continuous Drain Current : - 1.5 A
Resistance Drain-Source RDS (on) : 200 mOhms at 4.5 V
Package / Case : TSMT-5


Parameters:

Technical/Catalog Information	QS5U26TR
Vendor	Rohm Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	1.5A
Rds On (Max) @ Id, Vgs	200 mOhm @ 1.5A, 4.5V
Input Capacitance (Ciss) @ Vds	325pF @ 10V
Power - Max	900mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	4.2nC @ 4.5V
Package / Case	TSMT5
FET Feature	Diode (Isolated)
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	QS5U26TR QS5U26TR