QS5U26 Selling Leads, Price trend, QS5U26 DataSheet download, circuit diagram from SeekIC.com

Features: · The QS5U26 conbines Pch Treueh MOSFET with a Schottky barrier diode in a single TSMT5 package. · Pch Treueh MOSFET have a low on-state resisternce with a fast switching. · Pch Treueh MOSFET is neucted a low voltage drive (2.5V). · The independently connected Schottky barrier diode have...

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SeekIC No. : 004468541 Detail

QS5U26: Features: · The QS5U26 conbines Pch Treueh MOSFET with a Schottky barrier diode in a single TSMT5 package. · Pch Treueh MOSFET have a low on-state resisternce with a fast switching. · Pch Treueh MOS...

QS5U26 Data Sheet

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Part Number:: QS5U26
Supply Ability:: 5000

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1~5000

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Negotiable

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Upload time: 2024/11/21

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Product Details

Description

Features:

· The QS5U26 conbines Pch Treueh MOSFET with a Schottky barrier diode in a single TSMT5 package.
· Pch Treueh MOSFET have a low on-state resisternce with a fast switching.
· Pch Treueh MOSFET is neucted a low voltage drive (2.5V).
· The independently connected Schottky barrier diode have a low forward voltage.

Application

·load switch, DC/DC conversion

Specifications

Parameter		Symbol	Limits	Unit
Drain-source voltage		V_DSS	−20	V
Gate-source voltage		V_GSS	±12	V
Drain current	Continuous	I_D	±1.5	A
Drain current	Pulsed	I_DP	±6.0	A∗1
Source current (Body diode)	Continuous	I_S	−0.75	A
Source current (Body diode)	Pulsed	I_SP	−3.0	A∗1
Channel temperature		T_ch	150	°C

Parameter	Symbol	Limits	Unit
Repetitive peak reverse voltage	V_RM	30	V
Reverse voltage	V_R	20	V
Forward current	I_F	0.5	A
Forward current surge peak	I_FSM	0.2	A∗2
Junction temperature	T_j	125	°C

Parameter	Symbol	Limits	Unit
Total power dissipatino	P_D	1.0	W/TOTAL∗3
Range of strage temperature	T_stg	−40~+125	°C

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QS5U26

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